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200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
DTD743EE / DTD743EM
Applications Inverter, Interface, Driver Dimensions (Unit : mm)
DTD723YE
1.6 0.3
(3)
0.7 0.55
0.8
(2) (1)
(3)
Structure NPN epitaxial plannar silicon transistor (Resistor built-in type) Packaging specifications
Package Packaging type Code Part No. DTD723YE DTD723YM - Basic ordering unit (pieces) EMT3 Taping TL 3000 VMT3 Taping T2L 8000 -
0.2
0.22
(1)(2)
0.8 1.2
0.2
Feature 1. VCE (sat) is lower than the conventional products. 2. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4. Only the on / off conditions need to be set for operation, making the device design easy.
1.6
0.2 0.5 0.5
0.2
0.15
0.1Min.
0.13
EMT3 JEITA No. (SC-75A) JEDEC No.
1.0
(1) GND (2) IN (3) OUT
Each lead has same dimensions
Abbreviated symbol : M62
DTD723YM
1.2 0.32
0.4 0.4 0.8
0.5
(1) IN (2) GND (3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : M62
Absolute maximum ratings (Ta=25C)
Parameter Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature
1 2
Inner circuit
Limits Unit
R1 OUT
Symbol VCC VIN IC (max) PD Tj Tstg
DTD743EE DTD743EM 30 -10 to +20 200 150 150 -55 to +150
V V mA mW
IN R2 GND
IN
OUT GND
C C
1 Characteristics of built-in transistor. 2 Each terminal mounted on a recommended land.
R1=2.2k / R2=10k
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c 2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.05 - Rev.B
DTD743EE / DTD743EM
Electrical characteristics (Ta=25C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio
Characteristics of built-in transistor.
Data Sheet
Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1
Min. - 2.5 - - - 115 - 3.29 0.8
Typ. - - 70 - - - 260 4.7 1.0
Max. 0.5 - 300 1.4 0.5 - - 6.11 1.2
Unit V mV mA A - MHz k -
Conditions VCC= 5V, IO= 100A VO= 0.3V, IO= 20mA IO/II= 50mA / 2.5mA VI= 5V VCC= 30V, VI=0V VO= 2V, IO= 100mA VCE= 10V, IE= -5mA, f=100MHz - -
Electrical characteristics curves
100 Ta= 40 OUTPUT CURRENT : I O (mA) INPUT VOLTAGE : V I (on) (V) 25 85 10 125 100 VCC = 5V
10 Ta=125 85 25 40
1
1
0.1 0.1
V0= 0.3V 1 10 100 1000
0.1 0 1 2 3 4 INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (mA)
1000 Ta=125 85 DC CURENT GAIN : G I 25 100 40
VO= 2V OUTPUT VOLTAGE : VO(on) (V)
1
IC /II=20
Ta=125 85 25 0.1 40
10
1 0.1
0.01 1 10 100 OUTPUT CURENT : IO (mA) 1000 1 10 100 1000 OUOPUT CURRENT : IO (mA)
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c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.05 - Rev.B
Notice
Notes
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